Noise modeling with HiSIM based on self-consistent surface-potential description

被引：0

作者：

Miura-Mattausch, M ^{[1
]}

Hosokawa, S ^{[1
]}

Navarro, D ^{[1
]}

Matsumoto, S ^{[1
]}

Ueno, H ^{[1
]}

Mattausch, HJ ^{[1
]}

Ohguro, T ^{[1
]}

Iizuka, T ^{[1
]}

Taguchi, M ^{[1
]}

Kage, T ^{[1
]}

Miyamoto, S ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sc Matter, Hiroshima 7398526, Japan

来源：

NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS | 2004年

关键词：

MOSFET model; noise measurement; surface potential; HiSIM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is determined only by the I-V characteristics even for short-channel MOSFETs. Good agreement with measurements is the justification of the model implemented in HiSIM, the circuit simulation model based on a full surface-potential description. The thermal drain-noise coefficient gamma of short-channel MOSFETs increases from 2/3 under the saturation condition. The origin is explained by the potential increase along the channel.

引用

页码：66 / 69

页数：4

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