Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

被引：47

作者：

Nukala, Pavan ^{[1
]}

Wei, Yingfen ^{[1
]}

de Haas, Vincent ^{[1
]}

Guo, Qikai ^{[1
]}

Antoja-Lleonart, Jordi ^{[1
]}

Noheda, Beatriz ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, Groningen, Netherlands

来源：

FERROELECTRICS | 2020年 / 569卷 / 01期

关键词：

Polar rhombohedral phase; epitaxial (111) Hf0 .5Zr0.5O2 thin-films; compressive strain;

D O I：

10.1080/00150193.2020.1791658

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca2(1)) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading toward identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).

引用

页码：148 / 163

页数：16

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