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- [31] Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on SiACS APPLIED MATERIALS & INTERFACES, 2016, 8 (11) : 7232 - 7237Chernikova, Anna论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaKozodaev, Maksim论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaMarkeev, Andrei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaNegrov, Dmitrii论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaSpiridonov, Maksim论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaZarubin, Sergei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaBak, Ohheum论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaBuraohain, Pratyush论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaLu, Haidong论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaSuvorova, Elena论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland AV Shubnikov Crystallog Inst, Leninsky Pr 59, Moscow 119333, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaGruverman, Alexei论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaZenkevich, Andrei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia NRNU Moscow Engn Phys Inst, Moscow 115409, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
- [32] Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin filmsAPPLIED PHYSICS LETTERS, 2016, 108 (23)Fan, Zhen论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeXiao, Juanxiu论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeWang, Jingxian论文数: 0 引用数: 0 h-index: 0机构: Nanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeZhang, Lei论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeDeng, Jinyu论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeLiu, Ziyan论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeDong, Zhili论文数: 0 引用数: 0 h-index: 0机构: Nanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeWang, John论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, SingaporeChen, Jingsheng论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore
- [33] Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2JETP Letters, 2015, 102 : 544 - 547D. R. Islamov论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian BranchA. G. Chernikova论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian BranchM. G. Kozodaev论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian BranchA. M. Markeev论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian BranchT. V. Perevalov论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian BranchV. A. Gritsenko论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian BranchO. M. Orlov论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
- [34] Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin FilmsCOATINGS, 2022, 12 (11)Xiao, Yong-Guang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R ChinaLiu, Si-Wei论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R ChinaYang, Li-Sha论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R ChinaJiang, Yong论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R ChinaXiong, Ke论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R ChinaLi, Gang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R ChinaOuyang, Jun论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R ChinaTang, Ming-Hua论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan P, Xiangtan 411105, Peoples R China
- [35] Time-Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin FilmsADVANCED ELECTRONIC MATERIALS, 2021, 7 (08)Takada, Kenshi论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanTakarae, Shuya论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanShimamoto, Kento论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanFujimura, Norifumi论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanYoshimura, Takeshi论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
- [36] Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave AnnealingNANOMATERIALS, 2022, 12 (17)Zhao, Biyao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Coll Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaYan, Yunting论文数: 0 引用数: 0 h-index: 0机构: Boston Univ, Boston, MA 02215 USA Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaBi, Jinshun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Coll Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaXu, Gaobo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaXu, Yannan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Coll Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaYang, Xueqin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Coll Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaFan, Linjie论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Coll Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaLiu, Mengxin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Coll Integrated Circuits, Beijing 100049, Peoples R China Beijing Zhongke New Micro Technol Dev Co Ltd, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
- [37] Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin FilmsIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 1093 - 1097Shao, Minghao论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLu, Tianqi论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaWang, Zhibo论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiu, Houfang论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaZhao, Ruiting论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiu, Xiao论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaZhao, Xiaoyue论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiang, Renrong论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaYang, Yi论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaRen, Tian-Ling论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
- [38] Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin FilmsACS APPLIED MATERIALS & INTERFACES, 2018, 10 (41) : 35374 - 35384Hyun, Seung Dam论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaPark, Hyeon Woo论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKim, Yu Jin论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea论文数: 引用数: h-index:机构:Lee, Young Hwan论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKim, Han Joon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKwon, Young Jae论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaMoon, Taehwan论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKim, Keum Do论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaLee, Yong Bin论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKim, Baek Su论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaHwang, Cheol Seong论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
- [39] Ferroelectric Hf0.5Zr0.5O2 Thin Films Crystallized by Pulsed Laser AnnealingPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (05):Volodina, Natalia论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, Russia Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, RussiaDmitriyeva, Anna论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, Russia Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, RussiaChouprik, Anastasia论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, Russia Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, RussiaGatskevich, Elena论文数: 0 引用数: 0 h-index: 0机构: Belarusian Natl Tech Univ, Nezavisimosty Ave 65, Minsk 220013, BELARUS Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, RussiaZenkevich, Andrei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, Russia Moscow Inst Phys & Technol, Lab Funct Mat & Devices Nanoelect, Inst Skiy Per 9, Moscow 141701, Russia
- [40] Charge Transport Mechanism in Thin Films of Amorphous and Ferroelectric Hf0.5Zr0.5O2JETP LETTERS, 2015, 102 (08) : 544 - 547Islamov, D. R.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaChernikova, A. G.论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaKozodaev, M. G.论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaMarkeev, A. M.论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaPerevalov, T. V.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaGritsenko, V. A.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaOrlov, O. M.论文数: 0 引用数: 0 h-index: 0机构: Res Inst Mol Elect, Moscow 124460, Russia Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia