Phase Transition Characteristics in A-Site La3+ Modified Bi-Layered Aurivillius-Type Structure SrBi2Nb2O9 Ferroelectric Ceramics

被引:3
|
作者
Guerra, J. D. S. [1 ,2 ]
Reis, I. C. [2 ,3 ]
Silva, A. C. [2 ,3 ]
Araujo, E. B. [3 ]
Guo, R. [1 ]
Bhalla, A. S. [1 ]
机构
[1] Univ Texas San Antonio, Dept Elect & Comp Engn, Coll Engn, Multifunct Elect Mat & Devices Res Lab, San Antonio, TX 78249 USA
[2] Univ Fed Uberlandia, Inst Fis, Grp Ferroeletr & Mat Multifunc, BR-38400902 Uberlandia, MG, Brazil
[3] Univ Estadual Paulista, Dept Quim & Fis, BR-15385000 Ilha Solteira, SP, Brazil
基金
美国国家科学基金会;
关键词
Aurivillius; dielectric permittivity; phase transition; relaxors; BA;
D O I
10.1080/10584587.2015.1092217
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The phase transition characteristics have been investigated in lanthanum modified bismuth layer structured SrBi2Nb2O9 (SBN) ferroelectric ceramics, obtained from the conventional sintering method. In particular, structural, ferroelectric and dielectric properties have been analyzed taking into account the influence of the lanthanum content. Results of Raman spectroscopy as well as dielectric response suggested an evolution from normal ferroelectric-paraelectric phase transition to a relaxor-like behavior of the SLBN system, with the increase of the lanthanum concentration. The compositional cationic disorder has been considered as the main cause for the observed behavior, affecting the evolution of the long-rage polar ordering in the studied system.
引用
收藏
页码:150 / 157
页数:8
相关论文
共 50 条
  • [31] High dielectric permittivity of SrBi2Nb2O9(SBN) added Bi2O3 and La2O3
    Sancho, E. O.
    Silva, P. M. O.
    Pires Junior, G. F. M.
    Rodrigues, H. O.
    Freitas, D. B.
    Sombra, A. S. B.
    JOURNAL OF ELECTROCERAMICS, 2013, 30 (03) : 119 - 128
  • [32] Frequency dependent dielectric characteristics of undoped and vanadium-doped SrBi2Nb2O9 ferroelectric ceramics:: A comparative study
    Venkataraman, BH
    Varma, KBR
    FERROELECTRICS, 2005, 324 : 121 - 132
  • [33] Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9-Bi3TiNbO9 thin films
    Ching-Prado, E
    Pérez, W
    Dobal, PS
    Katiyar, RS
    Tirumala, S
    Desu, SB
    INTEGRATED FERROELECTRICS, 2000, 29 (1-2) : A33 - A41
  • [34] STRUCTURAL, MICROSTRUCTURAL AND DIELECTRIC PROPERTIES OF TRI-LAYERED AURIVILLIUS-TYPE STRUCTURE Bi4Ti3O12 FERROELECTRIC CERAMICS
    Reis, I. C.
    Silva, A. C.
    Guo, R.
    Bhalla, A. S.
    Guerra, J. D. S.
    PROCESSING AND PROPERTIES OF ADVANCED CERAMICS AND COMPOSITES VII, 2015, 252 : 131 - 136
  • [35] Enhanced dielectric and ferroelectric responses in La3+/Ti4+ co-substituted SrBi 2Ta2O9 Aurivillius phase
    Zulhadjri
    Wendari, Tio Putra
    Ikhram, Mukhniyal
    Putri, Yulia Eka
    Septiani, Upita
    Imelda
    CERAMICS INTERNATIONAL, 2022, 48 (07) : 10328 - 10332
  • [36] Texture and microstructur control in (SrBi2Nb2O9)1-x (Bi3TiNbO9)x ceramics
    Moure, A
    Ricote, J
    Chateigner, D
    Millán, P
    Castro, A
    Pardo, L
    FERROELECTRICS, 2002, 270 : 1195 - 1200
  • [37] Raman scattering in the Aurivillius-layered ferroelectric SrBi2Ta2O9 - Bi3TiNbO9 thin films
    Ching-Prado, E.
    Pérez, W.
    Dobal, P.S.
    Katiyar, R.S.
    Tirumala, S.
    Desu, S.B.
    2000, Gordon & Breach Science Publ Inc, Newark, NJ, United States (29) : 1 - 2
  • [38] STUDY OF PHASE TRANSITION IN Bi3TiNbO9-BaBi2Nb2O9 CERAMICS
    Adamczyk, M.
    Kusz, J.
    Hofmeister, W.
    Zubko, M.
    Kozielski, L.
    Pilch, M.
    Bochenek, D.
    Wodecka-Dus, B.
    ARCHIVES OF METALLURGY AND MATERIALS, 2016, 61 (03) : 1157 - 1164
  • [39] Dielectric properties of ceramics of composition (SrBi2Nb2O9)1-x(Bi3TiNbO9)x with controled texture and microstructure
    Moure, A
    Jiménez, R
    Alemany, C
    Pardo, L
    BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO, 2002, 41 (01): : 40 - 44
  • [40] Structural distortions and behavioural changes in phase transition of Aurivillius type Sr1-xPbxBi2Nb2O9 ferroelectric
    Shrivastava, V
    Jha, AK
    Mendiratta, RG
    FERROELECTRICS, 2005, 323 : 85 - 90