Silicon doping of InP using modified flow rate modulation epitaxy

被引：1
|
作者：
Hu, CC
Lin, MH
Lee, MK
机构：
[1] Department of Electrical Engineering, National Sun Yat-sen University
来源：
THIN SOLID FILMS | 1996年 / 288卷 / 1-2期
关键词：
InP; silicon doping; metal-organic chemical vapour deposition;
D O I：
10.1016/S0040-6090(96)08816-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, silicon doping using flow rate modulation epitaxy was found to produce better characteristics compared with conventional metal-organic chemical vapor deposition of the same growth system. The amount of phosphine is very critical in this new growth method. A lower compensation ratio (0.1) and higher mobility (3200 cm(2) V-1 s(-1) at 300 K) are obtained under the optimum conditions. These are very important for application to high speed and low noise devices.
引用
收藏
页码：147 / 149
页数：3
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