Dry etching of InGaAlP alloys in Cl-2/Ar high ion density plasmas

被引：5

作者：

Hong, J ^{[1
]}

Lee, JW ^{[1
]}

Lambers, ES ^{[1
]}

Abernathy, CR ^{[1
]}

Santana, CJ ^{[1
]}

Pearton, SJ ^{[1
]}

Hobson, WS ^{[1
]}

Ren, F ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 09期

关键词：

AlInP; dry etching; InGaP; plasma chemistry;

D O I：

10.1007/BF02655378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Etch rates above 1 mu m min(-1) are achieved for InGaP and AlInP under electron cyclotron resonance conditions in low pressure (1.5 mTorr) Cl-2/Ar discharges. Much lower rates were obtained for AlGaP due to the greater difficulty of the bond breaking that must precede formation and desorption of the etch products. The etched surface morphology and stoichiometry are strong functions of the plasma composition (i.e., the ion/neutral flux ratio). Under optimal conditions, there are no detectable chlorine related residues, in sharp contrast to reactive ion etching with this plasma chemistry.

引用

页码：1428 / 1433

页数：6

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