Geometric Evolution Laws for Thin Crystalline Films: Modeling and Numerics

被引：0

作者：

Li, Bo ^{[2
,3
]}

Lowengrub, John ^{[1
]}

Raetz, Andreas ^{[4
]}

Voigt, Axel ^{[1
,4
,5
]}

机构：

[1] Univ Calif Irvine, Dept Math, Irvine, CA 92697 USA

[2] Univ Calif San Diego, Dept Math, La Jolla, CA 92093 USA

[3] Univ Calif San Diego, Ctr Theoret Biol Phys, La Jolla, CA 92093 USA

[4] Tech Univ Dresden, Inst Wissensch Rechnen, D-01062 Dresden, Germany

[5] Aalto Univ, Dept Phys, Espoo 02015, Finland

来源：

COMMUNICATIONS IN COMPUTATIONAL PHYSICS | 2009年 / 6卷 / 03期

基金：

美国国家科学基金会;

关键词：

Interface problems; geometric evolution laws; anisotropy; kinetics; front tracking; level-set; phase-field; chemical vapor deposition; molecular beam epitaxy; liquid phase epitaxy; electrodeposition; ANISOTROPIC SURFACE-DIFFUSION; FINITE-ELEMENT APPROXIMATION; FREE SOLID FILMS; EPITAXIAL-GROWTH; MORPHOLOGICAL INSTABILITY; VECTOR THERMODYNAMICS; COARSENING DYNAMICS; PHASE-TRANSITIONS; SLOPE SELECTION; DISCRETE SCHEME;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Geometrical evolution laws are widely used in continuum modeling of surface and interface motion in materials science. In this article, we first give a brief review of various kinds of geometrical evolution laws and their variational derivations, with an emphasis on strong anisotropy. We then survey some of the finite element based numerical methods for simulating the motion of interfaces focusing on the field of thin film growth. We discuss the finite element method applied to front-tracking, phase-field and level-set methods. We describe various applications of these geometrical evolution laws to materials science problems, and in particular, the growth and morphologies of thin crystalline films.

引用

页码：433 / 482

页数：50

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