Growth of AgGaS2 single crystals by modified furnace

被引:22
|
作者
Chen, Baojun [1 ]
Zhu, Shifu [1 ]
Zhao, Beijun [1 ]
Zhang, Jianjun [1 ]
Huang, Yi [1 ]
Li, Ming [1 ]
Liu, Juan [1 ]
Tan, Bo [1 ]
Wang, Ruilin [1 ]
He, Zhiyu [1 ]
机构
[1] Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
关键词
Bridgman technique; silver thiogallate; nonlinear optic materials;
D O I
10.1016/j.jcrysgro.2006.04.057
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A crystal growth furnace with new structure was designed based on a conventional vertical resistance-wound tubular two-temperature-zone furnace in order to meet the requirements of growing high-quality AgGaS2 single crystals. Large temperature gradients of 25-30 degrees C/cm at the growth interface and stable thermal profile were obtained. Integral and crack-free AgGaS2 single crystals with fewer defects were grown successfully and reproducibly in the furnace mentioned above. A new cleavage face (101) was observed in the as-grown AgGaS2 crystal. The crystal was characterized by using XRD and IR transmission microscopy. It is found that multiple diffraction peaks of the {101} faces are evident, and that IR transmittance is above 60%. The results show not only that the modified furnace is a new promising furnace for the growth of AgGaS2 single crystals, but also that the quality of the grown crystal is good. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:490 / 493
页数:4
相关论文
共 50 条
  • [21] Effect of Ionizing Radiation Parameters on the Properties of AgGaS2 Single Crystals
    Asadov, S. M.
    Mustafaeva, S. N.
    Kelbaliev, K., I
    INORGANIC MATERIALS, 2022, 58 (02) : 111 - 116
  • [22] Growth and characterization of silver thiogallate (AgGaS2) crystals by the hydrothermal method
    Komatsu, R
    Watanabe, N
    Komai, E
    Kitakaze, A
    Ikeda, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9B): : 5662 - 5664
  • [23] Variation of the optical absorption edge in AgGaS2 single crystals at high pressure
    Power, C
    Gilliland, S
    Segura, A
    Gonzalez, J
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 235 (02): : 326 - 330
  • [24] FUNDAMENTAL ABSORPTION OF AGGAS2 SINGLE-CRYSTALS AND THIN POLYCRYSTALLINE FILMS
    VONCAMPE, H
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (11) : 1019 - 1023
  • [25] SOME CHARACTERISTICS OF AGGAS2 SINGLE-CRYSTALS GROWN FROM THE MELT
    MOCHIZUKI, K
    NIWA, E
    IWANAGA, H
    MASUMOTO, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 131 (1-2) : 41 - 48
  • [26] EXCITONIC LUMINESCENCE AND EDGE EMISSION IN AGGAS2 CRYSTALS
    AICARDI, JP
    LEYRIS, JP
    POURE, A
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1690 - 1693
  • [27] Study on the growth quartz ampoule of AgGaS2
    Wu Xiao-juan
    MECHANICAL ENGINEERING, MATERIALS SCIENCE AND CIVIL ENGINEERING II, 2014, 470 : 88 - 91
  • [28] Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization
    Prabukanthan, P.
    Dhanasekaran, R.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2008, 43 (12) : 1292 - 1296
  • [29] Excitation spectra of 2.47eV emission band on AgGaS2 single crystals
    Niwa, E
    Yasuda, T
    Masumoto, K
    Isshiki, M
    Segawa, Y
    TERNARY AND MULTINARY COMPOUNDS, 1998, 152 : 473 - 476
  • [30] GROWTH AND PROPERTIES OF PURE AND LI DOPED AGGAS2
    KASPER, HM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : C242 - C242