A 169.6-GHz Low Phase Noise and Wideband Hybrid Mode-Switching Push-Push Oscillator

被引:10
|
作者
Shu, Yiyang [1 ]
Qian, Huizhen Jenny [1 ]
Luo, Xun [1 ]
机构
[1] UESTC, Ctr Integrated Circuits, Chengdu 611731, Sichuan, Peoples R China
基金
中国国家自然科学基金;
关键词
Hybrid mode switching; oscillator; phase noise; push-push; subterahertz (sub-THz); wideband; VCO; DESIGN; GHZ; EFFICIENCY; OUTPUT; POWER;
D O I
10.1109/TMTT.2019.2913642
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wideband hybrid mode-switching push-push oscillator with low phase noise is presented in this paper. To achieve the wide tuning range, the inductive and capacitive hybrid mode-switching technique is proposed for the first time. It introduces more freedom of design parameters (i.e., inductance and capacitance) in the resonant tank. Under certain tuning range requirement, the hybrid mode-switching oscillator achieves higher input impedance of the resonator compared to the conventional mode-switching oscillators. Meanwhile, a transformer-coupled inductor ring with symmetrical layout configuration is proposed to realize the switch-less hybrid mode switching, which further improves the circuit performance at sub-THz. Therefore, a good phase noise performance can be obtained within a wide tuning range, which leads to a relaxed tradeoff between the phase noise and tuning range. To verify the aforementioned mechanism operating at sub-THz band, a hybrid mode-switching oscillator based on the dual-mode push-push topology is proposed and fabricated in a conventional 28-nm CMOS technology. The measured results show a 21.7% tuning range with the center frequency of 169.6 GHz and a state-of-the-art FoMT of -180.6 dBc/Hz. The core circuit only occupies 0.039 mm2, while drawing 95 mW with a 0.9-V supply.
引用
收藏
页码:2769 / 2781
页数:13
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