Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output

被引：0

作者：

Sinnesbichler, FX ^{[1
]}

Hautz, B ^{[1
]}

Olbrich, GR ^{[1
]}

机构：

[1] Infineon Technol AG, Munich, Germany

来源：

2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present hybrid SiGe HBT push-push oscillators at 58 GHz, fabricated on 5 mil Alumina substrates. A second output additionally allows to make use of the fundamental 29 GHz signal. A maximum output power of +1 dBm at 58 GHz and simultaneously of 0 dBm at 29 GHz were achieved. Phase noise at 58 GHz was measured to be -108 dBc/Hz at an offset frequency of 1 MHz.

引用

页码：35 / 38

页数：4

共 50 条

[1] Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output
[J]. Sinnesbichler, F.X., 2000, IEEE, Piscataway, NJ, United States (01):
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