Anneal Effect of Er doped Zinc Oxide by Spray Pyrolysis

被引：0

作者：

Hsieh, Tsung-Mao ^{[1
]}

Liu, Cheng-You ^{[1
]}

Huang, Hsiang-Ming ^{[1
]}

Lee, Che-Chi ^{[1
]}

Lan, Wen-How ^{[1
]}

Wang, Mu-Chun ^{[2
]}

Lin, Jia-Ching ^{[3
]}

Chang, Kuo-Jen ^{[3
]}

Lin, Wen-Jen ^{[3
]}

机构：

[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 81148, Taiwan

[2] Minghsin Univ Sci & Technol, Dept Elect Engn, Hsinchu 30401, Taiwan

[3] Natl Chung Shan Inst Sci & Technol, Taoyuan 32599, Taiwan

来源：

2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2018年

关键词：

zinc oxide; erbium; anneal; ZNO; LUMINESCENCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc oxide thin films with and without erbium doping were prepared by spray pyrolysis with zinc chloride and erbium acetate precursors. Film thickness profile after 700 degrees C annealing process were analyzed. With the anneal time increase, rough and smooth surface were characterized for the ZnO and ZnO:Er samples respectively. The 10K photoluminescence were applied for the film characterization.

引用

页码：360 / 361

页数：2

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