Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness

被引：17

作者：

Minkov, GM ^{[1
]}

Rut, OE

Germanenko, AV

Sherstobitov, AA

Zvonkov, BN

Shashkin, VI

Khrykin, OI

Filatov, DO

机构：

[1] Ural State Univ, Inst Phys & Appl Math, Ekaterinburg 620083, Russia

[2] Univ Nizhni Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603600, Russia

[3] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

[4] Univ Nizhni Novgorod, Res & Educ Ctr Phys Solid State Nanostruct, Nizhnii Novgorod 603600, Russia

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.70.035304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interference induced transverse negative magnetoresistance of GaAs/InxGa1-xAs/GaAs quantum well heterostructures has been studied in the presence of strong in-plane magnetic field. It is shown that the effect of in-plane magnetic field is determined by the interface roughness and strongly depends on the relationship between mean free path, phase breaking length, and roughness correlation length. Analysis of the experimental results allows us to estimate parameters of short- and long-range correlated roughness which have been found in a good agreement with atomic force microscopy data obtained for just the same samples.

引用

页码：035304 / 1

页数：8

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