Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates

被引：1
|
作者：
Avakyants, L. P. [1 ]
Bokov, P. Yu. [1 ]
Kazakov, I. P. [2 ]
Bazalevsky, M. A. [2 ]
Deev, P. M. [1 ]
Chervyakov, A. V. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia
[2] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
来源：
SEMICONDUCTORS | 2018年 / 52卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; BAND OFFSETS; ELECTROREFLECTANCE; HETEROSTRUCTURES; DEPENDENCE;
D O I：
10.1134/S1063782618070023
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition (E (g) ) and the transition between the conduction band and spin-orbit-split valence subband (E (g) + Delta (SO) ) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz-Keldysh oscillations).
引用
收藏
页码：849 / 852
页数：4
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