Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)

被引：36

作者：

Kormondy, Kristy J. ^{[1
]}

Abel, Stefan ^{[2
]}

Fallegger, Florian ^{[2
]}

Popoff, Youri ^{[2
]}

Ponath, Patrick ^{[1
]}

Posadas, Agham B. ^{[1
]}

Sousa, Marilyne ^{[2
]}

Caimi, Daniele ^{[2
]}

Siegwart, Heinz ^{[2
]}

Uccelli, Emanuele ^{[2
]}

Czornomaz, Lukas ^{[2
]}

Marchiori, Chiara ^{[2
]}

Fompeyrine, Jean ^{[2
]}

Demkov, Alexander A. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] IBM Res GmbH, Zurich Lab, CH-8803 Ruschlikon, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

基金：

美国国家科学基金会;

关键词：

BaTiO3; Molecular beam epitaxy; Ferroelectric oxides; Pockels effect; EPITAXIAL BATIO3 FILMS; MOLECULAR-BEAM EPITAXY; 001; SI; SILICON; GROWTH; SRTIO3; OXIDE;

D O I：

10.1016/j.mee.2015.04.041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality epitaxial BaTiO3 (BTO) on Si has emerged as a highly promising material for future electrooptic (EO) devices based on BTO's large effective Pockels coefficient. We report on the EO response of BTO films deposited on Si by molecular beam epitaxy (MBE), and characterize the structure of these films by reflection high-energy electron diffraction and X-ray diffraction. O-2 rapid thermal anneal at 600 degrees C for 30 min ensures full oxidation of BTO for minimal leakage current with minimal change in crystalline structure. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：215 / 218

页数：4

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