Influence of AlN nucleation layer on vertical breakdown characteristics for GaN-on-Si

被引：41
|
作者：
Freedsman, J. J. [1 ]
Watanabe, A. [1 ]
Yamaoka, Y. [1 ]
Kubo, T. [1 ]
Egawa, T. [1 ,2 ]
机构：
[1] Nagoya Inst Technol, Res Ctr Nano Devices & Adv Mat, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Innovat Ctr Multibusiness Nitride Semicond, Nagoya, Aichi 4668555, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 02期
基金：
日本科学技术振兴机构;
关键词：
AlN; breakdown voltage; chemical vapor deposition; GaN; strained layer superlattices; vertical leakage; ELECTRON-MOBILITY TRANSISTORS; ALN/ALGAN SUPERLATTICES; ALGAN/GAN HEMTS; SILICON; BUFFER; ENHANCEMENT; VOLTAGE;
D O I：
10.1002/pssa.201532601
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A study of metal-organic chemical vapor deposition (MOCVD) grown AlN nucleation layer (NL) on breakdown characteristics for GaN-on-Si is presented. It is widely believed that AlN NL can act as an insulator because of its large band gap approximate to 6.2eV. On contrary, this study of AlN NL/Si reveals conductive nature and shows high vertical leakage. The structural examinations along with electrical characterization show AlN NL/Si quality depends on the growth temperature. The surface morphology and presence of unintentional oxygen impurities govern the vertical leakage of AlN NL/Si. Interestingly, the AlN NL influences the growth of subsequent epitaxial layers as well as their vertical breakdown voltages (BVs). Further, it is found that AlGaN intermediate layer and multipairs of AlGaN/AlN strained layer superlattice (SLS) grown over AlN NL with better surface properties enhances the vertical BV. A high BV of 1.3kV is achieved for SLS multipairs with a total thickness of 4.4m and the translated breakdown field strength is 2.8MVcm(-1) for MOCVD grown GaN-on-Si.
引用
收藏
页码：424 / 428
页数：5
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