Cathodoluminescence spectral mapping of selectively grown III-nitride structures

被引：0
|
作者：
Martin, RW
Edwards, PR
Liu, C
Deatcher, CJ
Chong, HMH
De La Rue, RM
Watson, IM
机构：
[1] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland
[2] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland
[3] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland
来源：
ELECTRON MICROSCOPY AND ANALYSIS 2003 | 2004年 / 179期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An array of pyramids containing templated InGaN/GaN quantum wells have been fabricated using selective overgrowth above patterned silica masks and studied using cathodoluminescence hyperspectral imaging. The cathodoluminescence reveals bright luminescence at the peaks of the micropyramids, red shifted from that due to similar, conventionally grown planar quantum wells. The possibility that this emission is due to quantum dots is discussed.
引用
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页码：135 / 138
页数：4
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