Effect of the plasma treatment of anode electrode of the organic light-emitting diodes on the growth of hole-injection layer

被引：6
|
作者：
Park, Young Wook [1 ]
Jang, Jong Hoon [1 ]
Kim, Young Min [1 ]
Choi, Jin Hwan [1 ]
Park, Tae Hyun [1 ]
Choi, Jinnil [1 ]
Ju, Byeong Kwon [1 ]
机构：
[1] Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 14期
基金：
新加坡国家研究基金会;
关键词：
Organic light-emitting diodes; Hole-injection layer; Copper phthalocyanine; Morphology; Surface polarity; INDIUM TIN OXIDE; SURFACE; PERFORMANCE; TRANSPORT; IMPROVE; DEVICES; O-2;
D O I：
10.1016/j.tsf.2009.01.180
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we focused on the effects of the plasma treatment of the anode electrode of organic light emitting diodes (OLED) on the growth of hole-injection layer (HIL). The CF4 plasma (CF4-P) treatment, which is known for efficient method to enhance the performance of OLED, was not effective on the OLED with the HIL material copper phthalocyanine (CuPc). The CF4-P treated OLED showed remarkably reduced electroluminescence (EL) characteristics while the O-2 plasma treated OLED showed improved EL efficiency. The dependence of the CuPc growth on the polarity of substrate induced the morphological difference of the HIL, and finally resulted in the different device characteristics. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：4108 / 4110
页数：3
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