STM investigation of 2- and 3-dimensional Er disilicide grown epitaxially on Si(111)

被引：38

作者：

Wetzel, P ^{[1
]}

Saintenoy, S ^{[1
]}

Pirri, C ^{[1
]}

Bolmont, D ^{[1
]}

Gewinner, G ^{[1
]}

Roge, TP ^{[1
]}

Palmino, F ^{[1
]}

Savall, C ^{[1
]}

Labrune, JC ^{[1
]}

机构：

[1] POLE UNIV,EQUIPE ELECT SOLIDES,LAB PHYS & METROL OSCILLATEURS,UPR,CNRS 3203,F-25211 MONTBELIARD,FRANCE

来源：

SURFACE SCIENCE | 1996年 / 355卷 / 1-3期

关键词：

angle resolved photoemission; scanning tunneling microscopy; epitaxy; surface electronic phenomena; surface structure; morphology; roughness; and topography; silicides; metal-semiconductor interfaces;

D O I：

10.1016/0039-6028(95)01349-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface atomic structure of 2- and 3-dimensional (D) Er disilicide epitaxially grown on Si(111) has been investigated by scanning tunneling microscopy (STM) and angle-resolved photoemission. The STM images reveal that highly ordered 2D and 3D silicide islands can be grown on the flat Si(111)7x7 terraces and atomic resolution scans clearly confirm that both silicides are terminated by a Si bilayer without vacancies. In the 3D case the outermost Si atoms exhibit an additional small buckling with root 3 x root 3R30 degrees periodicity. The STM data imply a specific registry of the surface Si layer with respect to the vacancy net underneath which is found to be in nice agreement with the symmetry of the dangling bond states at <(Gamma)over bar> observed in polarization dependent photoemission.

引用

页码：13 / 20

页数：8

共 50 条

[11] Interface structure of ultrathin CoSi2 films epitaxially grown on Si(111)
Seubert, A
Schardt, J
Weiss, W
Starke, U
Heinz, K
Fauster, T
APPLIED PHYSICS LETTERS, 2000, 76 (06) : 727 - 729
[12] ENERGY-BAND STRUCTURE OF COSI2 EPITAXIALLY GROWN ON SI(111)
GEWINNER, G
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
DERRIEN, J
THIRY, P
PHYSICAL REVIEW B, 1988, 38 (03): : 1879 - 1884
[13] Room temperature magnetoresistance in Fe3Si/CaF2/Fe3Si MTJ epitaxially grown on Si(111)
Harada, K.
Makabe, K. S.
Akinaga, H.
Suemasu, T.
2ND INTERNATIONAL SYMPOSIUM ON ADVANCED MAGNETIC MATERIALS AND APPLICATIONS (ISAMMA 2010), 2011, 266
[14] STM/STS Measurements of Two-Dimensional Electronic States in Magnetic Fields at Epitaxially Grown InAs(111) A Surfaces
Niimi, Y.
Kanisawa, K.
Kojima, H.
Kambara, H.
Hirayama, Y.
Tarucha, S.
Fukuyama, Hiroshi
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, 61 : 874 - 878
[15] Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates
Chen, S.
Zhu, Y. Y.
Xu, R.
Wu, Y. Q.
Yang, X. J.
Fan, Y. L.
Lu, F.
Jiang, Z. M.
Zou, J.
APPLIED PHYSICS LETTERS, 2006, 88 (22)
[16] GROWTH OF A 2-DIMENSIONAL ER SILICIDE ON SI(111)
PAKI, P
KAFADER, U
WETZEL, P
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
PHYSICAL REVIEW B, 1992, 45 (15): : 8490 - 8493
[17] Structural determination of two-dimensional YSi2 epitaxially grown on Si(111) -: art. no. 235421
Rogero, C
Polop, C
Magaud, L
Sacedón, JL
de Andrés, PL
Martín-Gago, JA
PHYSICAL REVIEW B, 2002, 66 (23): : 1 - 7
[18] Fe3Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO2 film technique
Nakamura, Yoshiaki
Fukuda, Kenjiro
Amari, Shogo
Ichikawa, Masakazu
THIN SOLID FILMS, 2011, 519 (24) : 8512 - 8515
[19] Tensile strain in Si due to expansion of lattice spacings in CeO2 epitaxially grown on Si(111)
Nishikawa, Y
Matsushita, D
Satou, N
Yoshiki, M
Schimizu, T
Yamaguchi, T
Satake, H
Fukushima, N
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II, 2004, 2003 (22): : 155 - 163
[20] Tensile strain in Si due to expansion of lattice spacings in CeO2 epitaxially grown on Si(111)
Nishikawa, Y
Matsushita, D
Satou, N
Yoshiki, M
Schimizu, T
Yamaguchi, T
Satake, H
Fukushima, N
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (09) : F202 - F205

← 1 2 3 4 5 →