Modelling voltage dependence of photocurrent in proton irradiated GaAs cells

被引：0

作者：

Salzberger, Manuel ^{[1
,2
]}

Rutzinger, Martin ^{[1
,2
]}

Noemayr, Christel ^{[1
]}

Lugli, Paolo ^{[3
]}

Zimmermann, Claus G. ^{[1
]}

机构：

[1] Airbus Def & Space GmbH, D-82024 Taufkirchen, Germany

[2] Tech Univ Munich, Inst Nanoelect, D-80333 Munich, Germany

[3] Free Univ Bozen Bolzano, I-39100 Bolzano, Italy

来源：

2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2017年

关键词：

SOLAR-CELLS; COLLECTION; SPACE;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaAs single junction cells were irradiated with high doses of protons and current-voltage characteristics were obtained under AM0 illumination. A discrepancy between the measured photocurrent and the typically constant photocurrent of a solar cell was determined. The measured photocurrent showed a voltage dependence. We attribute the voltage dependence of the photocurrent to a combination of low diffusion length and the voltage dependence of the width of the space charge region. A model is developed which predicts the photocurrent of the cells correctly.

引用

页码：29 / 34

页数：6

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