Modelling voltage dependence of photocurrent in proton irradiated GaAs cells

被引：0
|
作者：
Salzberger, Manuel [1 ,2 ]
Rutzinger, Martin [1 ,2 ]
Noemayr, Christel [1 ]
Lugli, Paolo [3 ]
Zimmermann, Claus G. [1 ]
机构：
[1] Airbus Def & Space GmbH, D-82024 Taufkirchen, Germany
[2] Tech Univ Munich, Inst Nanoelect, D-80333 Munich, Germany
[3] Free Univ Bozen Bolzano, I-39100 Bolzano, Italy
来源：
2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2017年
关键词：
SOLAR-CELLS; COLLECTION; SPACE;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
GaAs single junction cells were irradiated with high doses of protons and current-voltage characteristics were obtained under AM0 illumination. A discrepancy between the measured photocurrent and the typically constant photocurrent of a solar cell was determined. The measured photocurrent showed a voltage dependence. We attribute the voltage dependence of the photocurrent to a combination of low diffusion length and the voltage dependence of the width of the space charge region. A model is developed which predicts the photocurrent of the cells correctly.
引用
收藏
页码：29 / 34
页数：6
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