The principal characteristics of interlayer interaction and relative motion of hexagonal boron nitride (h-BN) layers are investigated by the first-principles method taking into account van der Waals interactions. The dependence of the interlayer interaction energy on the relative translational displacement of h-BN layers (potential energy surfaces) are calculated for two relative orientations of the layers, namely, for the layers aligned in the same direction and in the opposite directions upon the relative rotation of the layers by 180 degrees. It is shown that the potential energy surfaces of bilayer h-BN can be approximated by the first Fourier components determined by symmetry. As a result, a wide set of physical quantities describing the relative motion of h-BN layers aligned in the same direction including barriers to their relative sliding and rotation, shear mode frequency and shear modulus are determined by a single parameter corresponding to the roughness of the potential energy surface, similar to bilayer graphene. The properties of h-BN layers aligned in the opposite directions are described by two such parameters. The possibility of partial and full dislocations in stacking of the layers is predicted for h-BN layers aligned in the same and opposite directions, respectively. The extended two-chain Frenkel-Kontorova model is used to estimate the width and formation energy of these dislocations on the basis of the calculated potential energy surfaces.
机构:
Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaShanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Jiang Cheng-Xin
Chen Ling-Xiu
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaShanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Chen Ling-Xiu
Wang Hui-Shan
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R ChinaShanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Wang Hui-Shan
Wang Xiu-Jun
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R ChinaShanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Wang Xiu-Jun
Chen Chen
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R ChinaShanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Chen Chen
Wang Hao-Min
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R ChinaShanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Wang Hao-Min
Xie Xiao-Ming
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Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R ChinaShanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
机构:
Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, BrazilUniv Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
Padilha, Jose Eduardo
Pontes, Renato Borges
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Univ Fed Goias, Inst Fis, BR-74001970 Goiania, Go, BrazilUniv Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
Pontes, Renato Borges
Roque da Silva, Antonio Jose
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Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
Lab Nacl Luz Sincrotron, BR-13083970 Campinas, SP, BrazilUniv Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
Roque da Silva, Antonio Jose
Fazzio, Adalberto
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Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, BrazilUniv Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
机构:
Jackson State Univ, Dept Phys Atmospher Sci & Geosci, Jackson, MS 39217 USAJackson State Univ, Dept Phys Atmospher Sci & Geosci, Jackson, MS 39217 USA
Napolion, Brian
Williams, Quinton L.
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Jackson State Univ, Dept Phys Atmospher Sci & Geosci, Jackson, MS 39217 USAJackson State Univ, Dept Phys Atmospher Sci & Geosci, Jackson, MS 39217 USA