Applications of silicon-germanium-carbon in MOS and bipolar transistors

This paper will review growth of Si-Ge and Si-Ge-C alloys using various low thermal budget epitaxial schemes such as UHVCVD, RTPCVD and MBE. The growth issues, materials aspects and bandgap and strain engineering in these alloys will be discussed. The prospects of using these alloys in strained-channel Si-Ge MOSFETs and MODFETs in order to enhance CMOS in the gi,oa-scale era will be discussed. We will also describe the use of these films in Si-Ge HBTs for high speed r-f type applications.