Ferromagnetism Through Cr Doping In Topological Insulator Bi2Te3

被引：1
|
作者：
Maurya, V. K. [1 ]
Patnaik, S. [1 ]
机构：
[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
来源：
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷
关键词：
Topological insulator; Cr-0.05(Bi2Te3)(0.95); Cr doping; resistivity;
D O I：
10.1063/1.4872916
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper we report the preparation of single crystals of Bi2Te3 and Cr-0.05(Bi2Te3)(0.95) by modified Bridgman method. XRD, EDX and SEM analysis of these crystals have been done for the confirmation of the purity of the samples. Resistivity measurement from 2 K to 300 K has been done by Vander-Pauw method. We observed 20% increase in resistivity after Cr doping. Hall measurement has been done at 2 K for both the samples and we found that after Cr doping charge carrier density has increased but mobility is decreased by a factor of similar to 7.9. We also provide evidence for ferromagnetism with Cr doping onto Bi2Te3.
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页码：1239 / 1241
页数：3
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