Atomic layer epitaxial predeposition for GaAs growth on Si

被引：3
|
作者：
Das, U
Dhar, S
Mazumdar, M
机构：
[1] INDIAN INST TECHNOL,LASER TECHNOL PROGRAM,KANPUR 208016,UTTAR PRADESH,INDIA
[2] UNIV CALCUTTA,DEPT ELECT SCI,CALCUTTA 700009,W BENGAL,INDIA
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 25期
关键词：
D O I：
10.1063/1.116641
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a two-step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by metalorganic vapor phase epitaxy technique. a Photoluminescence and deep-level transient spectroscopy techniques are used to show that the quality of the grown material is comparable to that sown by a much complicated procedure involving strained layer superlattice buffers introduced between the active GaAs layer and the Si substrate. (C) 1996 American Institute of Physics.
引用
收藏
页码：3573 / 3575
页数：3
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