Atomic layer epitaxial predeposition for GaAs growth on Si

We report a two-step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by metalorganic vapor phase epitaxy technique. a Photoluminescence and deep-level transient spectroscopy techniques are used to show that the quality of the grown material is comparable to that sown by a much complicated procedure involving strained layer superlattice buffers introduced between the active GaAs layer and the Si substrate. (C) 1996 American Institute of Physics.