GA-BP in Thermal Fatigue Failure Prediction of Microelectronic Chips

被引:14
|
作者
Han, Zhongying [1 ]
Huang, Xiaoguang [2 ]
机构
[1] China Univ Petr East China, Sch Petr Engn, Qingdao 266580, Shandong, Peoples R China
[2] China Univ Petr East China, Dept Engn Mech, Qingdao 266580, Shandong, Peoples R China
来源
ELECTRONICS | 2019年 / 8卷 / 05期
基金
中国国家自然科学基金;
关键词
thermal fatigue; microelectronic chip; singularity parameters; GA-BP; life prediction; SOLDER JOINT FATIGUE; GENETIC ALGORITHM; NEURAL-NETWORK; FLIP-CHIP; STRESS SINGULARITIES; LIFE; INTERFACE; BEHAVIOR; FRACTURE; SNAGCU;
D O I
10.3390/electronics8050542
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A thermal fatigue life prediction model of microelectronic chips based on thermal fatigue tests and solder/substrate interfacial singularity analysis from finite element method (FEM) analysis is established in this paper. To save the calculation of interfacial singular parameters of new chips for life prediction, and improve the accuracy of prediction results in actual applications, a hybrid genetic algorithm-artificial neural network (GA-ANN) strategy is utilized. The proposed algorithm combines the local searching ability of the gradient-based back propagation (BP) strategy with the global searching ability of a genetic algorithm. A series of combinations of the dimensions and thermal mechanical properties of the solder and the corresponding singularity parameters at the failure interface are used to train the proposed GA-BP network. The results of the network, together with the established life prediction model, are used to predict the thermal fatigue lives of new chips. The comparison between the network results and thermal fatigue lives recorded in experiments shows that the GA-BP strategy is a successful prediction technique.
引用
收藏
页数:14
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