Single-electron tunneling in silicon-on-insulator nano-wire transistors

被引：1

作者：

Cho, KH

Son, SH

Hong, SH

Kim, BC

Hwang, SW

Ahn, D

Park, BG

Naser, B

Lin, JF

Bird, JP

Ferry, DK

机构：

[1] Korea Univ, Dept Elect & Comp Engn, Seoul 136075, South Korea

[2] Seoul Natl Univ, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea

[3] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

[4] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151742, South Korea

[5] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[6] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 3-6期

关键词：

SOI; nano-wire; single-electron tunneling; potential fluctuation;

D O I：

10.1016/j.spmi.2004.03.015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nanowire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated. (C) 2004 Elsevier Ltd. All rights reserved.

引用

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页码：245 / 251

页数：7

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