A CMOS circuit for evaluating the NBTI over a wide frequency range

被引：2

作者：

Fernandez-Garcia, R. ^{[1
]}

Kaczer, B. ^{[2
]}

Groeseneken, G. ^{[2
]}

机构：

[1] Univ Politecn Cataluna, Dept Elect Engn, E-08222 Terrassa, Spain

[2] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONICS RELIABILITY | 2009年 / 49卷 / 08期

关键词：

D O I：

10.1016/j.microrel.2009.05.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper an application specific integrated circuit (ASIC) for evaluating the NBTI effects over a wide frequency is described. The circuit is designed to allow measurements in multiple modes, specifically, DC and AC NBTI, on single pFET and on an inverter. The results indicate that AC NBTI is independent of the frequency in the 1 Hz-2 GHz range. Furthermore, the voltage and the stress time acceleration are identical for both AC and DC NBTI stress. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：885 / 891

页数：7

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