Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser

被引：42
|
作者：
Feng, M. [1 ]
Holonyak, N., Jr. [1 ]
James, A. [1 ]
Cimino, K. [1 ]
Walter, G. [1 ]
Chan, R. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期
关键词：
D O I：
10.1063/1.2346369
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A quantum well (160 A) transistor laser with a 400 mu m cavity length that achieves the large 3 dB modulation bandwidth of 13.5 GHz is described. The fast base recombination (transport determined, tau(BL)< 10 ps) permits improvement of the carrier-photon damping ratio (> 1/root 2), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of similar to 0 GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (lambda=1000 nm), and increase with operation on the first excited state (lambda=980 nm). (c) 2006 American Institute of Physics.
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页数：3
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