Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition

被引：11

作者：

Chen Zhao-Quan ^{[1
]}

Liu Ming-Hai ^{[1
]}

Liu Yu-Ping ^{[1
]}

Chen Wei ^{[1
]}

Luo Zhi-Qing ^{[1
]}

Hu Xi-Wei ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Key Lab Fus & Adv Electromagnet Technol, Minist Educ, Coll Elect & Elect Engn, Wuhan 430074, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 06期

关键词：

AZO (ZnO:Al); plasma enhanced chemical vapor deposition; transparent conductive film; AL THIN-FILMS;

D O I：

10.7498/aps.58.4260

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AZO(ZnO:Al) polycrystalline thin films with strong adhesion to the substrate, as low as 89 Omega of sheet electronic resistivity and as high as 79% of visible light transmittance, are fabricated by PECVD (plasma enhanced chemical vapor deposition) method on glass and silicon substrate. The AZO film fabricated by PECVD is a useful attempt. The AZO transparent conductive film has the good photovoltaic properties like that of ITO (In2O3 : Sn); moreover, it is cheap, more nontoxic, and more stable in hydrogen plasma environment than ITO. The results obtained are very important to the selection of the technical conditions.

引用

页码：4260 / 4266

页数：7

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