An Evaluation of SiGe HBT Operation at Cryogenic Temperatures

被引：0
|
作者：
Cherepanov, Anton A. [1 ]
Novikov, Ilya L. [2 ]
Vasiliev, Vladislav Yu [1 ,2 ]
机构：
[1] SibIS LLC, Novosibirsk, Russia
[2] NSTU, Novosibirsk, Russia
来源：
2019 20TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2019) | 2019年
关键词：
SiGe HBT; LNT; cryogenic electronics; I-V measurement; CURRENT GAIN; DEPENDENCE;
D O I：
10.1109/edm.2019.8823464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper deals with silicon-germanium heterojunction transistor's operation under cryogenic conditions. Evaluating methodology was demonstrated with simple tool set. Families of output and input I-V characteristics in common emitter mode were measured at room and liquid nitrogen temperatures. Some cryogenic effects were observed and discussed, namely: 1) increasing of turn-on voltage due to freezing of major carriers in emitter with cooling, 2) enhancement of current gain due to bandgap difference of Si emitter and SiGe base even at LNT, 3) reducing of breakdown voltage due to more pronounced avalanche multiplication, 4) early voltage decreasing because of neutral base recombination, 5) improvement of power dissipation and reducing of self-heating effect. Despite of these effects, SiGe HBTs save their robust operation at cryogenic temperatures that confirms the capability of used IC technology process for LNT applications.
引用
收藏
页码：23 / 27
页数：5
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