Study of a quantum CNOT logic gate with electron spins of diamond impurities

被引：2
|
作者：
Hebbache, M. [1 ]
机构：
[1] Univ Paris 07, Sorbonne Paris Cite, MPO, UMR CNRS 7162, F-75205 Paris, France
来源：
SOLID STATE COMMUNICATIONS | 2014年 / 194卷
关键词：
Semiconductors; Impurities in semiconductors; Spin dynamics; Electron paramagnetic resonance; N-V CENTER; COUPLED ELECTRON; DEFECT CENTER; RESONANCE; COHERENCE; DYNAMICS;
D O I：
10.1016/j.ssc.2014.05.015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Quantum computing requires a set of universal quantum gates. The standard set includes single quantum bit (qubit) gates and the controlled-NOT (CNOT) which is the analog of the classical XOR gate. It flips the state of the target qubit conditioned on the state of the control qubit. We investigated the possibility of implementing a CNOT logic gate using magnetically coupled impurity spins of diamond, namely the electron spin-1 carried by the nitrogen-vacancy color center and the electron spin-1/2 carried by a nearby nitrogen atom in substitutional position (P1 center). It is shown that a 96 ns gate time with a high-fidelity can be realized by means of pulsed electron spin resonance spectroscopy. (C) 2014 Elsevier Ltd. All rights reserved
引用
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页码：20 / 24
页数：5
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