Near band edge absorption spectra of narrow-gap III-V semiconductor alloys

被引：30

作者：

Krishnamurthy, S ^{[1
]}

Chen, AB ^{[1
]}

Sher, A ^{[1
]}

机构：

[1] AUBURN UNIV,AUBURN,AL 36349

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.363364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near band edge absorption spectra of the narrow-gap semiconductor alloys InxT1-xP, InxT1-xAs, and InxT1-xSb were calculated and compared with those of HgxCd1-xTe. To test accuracy, we compared the calculated absorption spectra in GaAs with experimental results and found good agreement. Within 50 meV from the absorption edge, the absorption coeffi cient of InxT1-xP is found to have about the same magnitude as that in HgxCd1-xTe and GaAs, whereas that in InxT1-xAs and InxT1-xSb is much smaller. This result and other merits found from previous studies indicate that InxT1-xP has a potential to compete favorably with HgxCd1-xTe for long-wavelength infrared applications. (C) 1996 American Institute of Physics.

引用

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页码：4045 / 4048

页数：4

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