Intrinsic magnetic properties of hexagonal LuFeO3 and the effects of nonstoichiometry

被引:65
|
作者
Moyer, Jarrett A. [1 ,2 ]
Misra, Rajiv [3 ]
Mundy, Julia A. [4 ]
Brooks, Charles M. [5 ]
Heron, John T. [5 ]
Muller, David A. [4 ,6 ]
Schlom, Darrell G. [5 ,6 ]
Schiffer, Peter [1 ,2 ]
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res, Urbana, IL 61801 USA
[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[4] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[5] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[6] Cornell Nanoscale Sci, Kavli Inst, Ithaca, NY 14853 USA
来源
APL MATERIALS | 2014年 / 2卷 / 01期
基金
美国国家科学基金会;
关键词
CRYSTAL-STRUCTURE; THIN-FILMS; MULTIFERROICS; FERROELECTRICITY; LUFE2O4; MEMORY; ORDER;
D O I
10.1063/1.4861795
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We used oxide molecular-beam epitaxy in a composition-spread geometry to deposit hexagonal LuFeO3 (h-LuFeO3) thin films with a monotonic variation in the Lu/Fe cation ratio, creating a mosaic of samples that ranged from iron rich to lutetium rich. We characterized the effects of composition variation with x-ray diffraction, atomic force microscopy, scanning transmission electron microscopy, and superconducting quantum interference device magnetometry. After identifying growth conditions leading to stoichiometric film growth, an additional sample was grown with a rotating sample stage. From this stoichiometric sample, we determined stoichiometric h-LuFeO3 to have a T-N = 147 K and M-s = 0.018 mu(B)/Fe. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
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页数:8
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