Weak-Field Hall Effect in Graphene Calculated within Self-Consistent Born Approximation

被引：31

作者：

Fukuzawa, Toshiyuki ^{[1
]}

Koshino, Mikito ^{[1
]}

Ando, Tsuneya ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2009年 / 78卷 / 09期

关键词：

graphene; Hall coefficient; Hall conductivity; two-dimensional graphite; level broadening; Dirac point; 2-DIMENSIONAL GRAPHITE SYSTEM; CARBON NANOTUBES; ELECTRONIC STATES; QUANTUM TRANSPORT; BACK SCATTERING; BAND STRUCTURE; BERRYS PHASE; CONDUCTIVITY; ABSENCE;

D O I：

10.1143/JPSJ.78.094714

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The weak-field Hall conductivity is calculated in monolayer graphene within a self-consistent Born approximation. The Hall conductivity sufficiently away from the Dirac point exhibits the dependence qualitatively in agreement with the Boltzmann result, but it deviates in the region near zero energy, the width of which is singularly dependent on the scattering strength. The experimental results can be reasonably well understood by assuming that the scattering strength increases with the decrease of the electron concentration and saturates in this region.

引用

页数：7

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