Band alignment at band-insulator/Mott-insulator interfaces

被引:5
|
作者
Janotti, A. [1 ]
Bjaalie, L. [1 ]
Himmetoglu, B. [1 ]
Van de Walle, C. G. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源
关键词
complex oxides; band alignment; Mott insulators; density functional theory; 2D electron gas; SrTiO3/YTiO3; interfaces; TOTAL-ENERGY CALCULATIONS; ELECTRONIC-STRUCTURE;
D O I
10.1002/pssr.201409088
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent experiments have demonstrated the formation of a two-dimensional electron gas (2DEG) with a high density of 3 x 10(14) cm(-2) at the interface of a band insulator (SrTiO3) and a Mott insulator (GdTiO3), with potential application in electronic devices. This contrasted with the 2DEG at the SrTiO3/LaAlO3 interface, two band insulators, for which the reported electron densities are an order of magnitude lower. Understanding the differences between SrTiO3/LaAlO3 and SrTiO3/GdTiO3, and identifying other materials combinations that also give rise to such high 2DEG densities will add flexibility to materials design and contribute to advancing this field of research. Based on first-principles calculations, we propose that YTiO3 combined with SrTiO3 will also lead to a 2DEG with density of 3 x 10(14) cm(-2). YTiO3 is a Mott insulator, with lattice parameters and band structure similar to those of GdTiO3. We calculate the band alignment at the SrTiO3/YTiO3 interface, compare with the SrTiO3/GdTiO3 system, and discuss the origins of the differences between the rare-earth titanates and LaAlO3 regarding the 2DEG densities. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:577 / 582
页数:6
相关论文
共 50 条
  • [21] Interface band profiles of Mott-insulator/Nb : SrTiO3 heterojunctions as investigated by optical spectroscopy
    Nakamura, Masao
    Sawa, Akihito
    Fujioka, Jun
    Kawasaki, Masashi
    Tokura, Yoshinori
    PHYSICAL REVIEW B, 2010, 82 (20)
  • [22] Effects of inhomogeneity on the spectrum of the Mott-insulator state
    Pupillo, G
    Tiesinga, E
    Williams, CJ
    PHYSICAL REVIEW A, 2003, 68 (06):
  • [23] Band insulator to Mott insulator transition in 1T-TaS2
    Wang, Y. D.
    Yao, W. L.
    Xin, Z. M.
    Han, T. T.
    Wang, Z. G.
    Chen, L.
    Cai, C.
    Li, Yuan
    Zhang, Y.
    NATURE COMMUNICATIONS, 2020, 11 (01)
  • [24] Band insulator to Mott insulator transition in 1T-TaS2
    Y. D. Wang
    W. L. Yao
    Z. M. Xin
    T. T. Han
    Z. G. Wang
    L. Chen
    C. Cai
    Yuan Li
    Y. Zhang
    Nature Communications, 11
  • [25] Rashba-metal to Mott-insulator transition
    Brosco, Valentina
    Capone, Massimo
    PHYSICAL REVIEW B, 2020, 101 (23)
  • [26] Electro-Optical Switching Behavior of a Mott Insulator - Band Insulator Interface
    Rastogi, A.
    Kushwaha, A. K.
    Shiyani, T.
    Gangawar, A.
    Budhani, R. C.
    SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B, 2011, 1349 : 967 - 968
  • [27] Traces of the evolution from Mott insulator to a band insulator in the pair excitation spectra
    B. D. Napitu
    J. Berakdar
    The European Physical Journal B, 2012, 85
  • [28] Traces of the evolution from Mott insulator to a band insulator in the pair excitation spectra
    Napitu, B. D.
    Berakdar, J.
    EUROPEAN PHYSICAL JOURNAL B, 2012, 85 (02):
  • [29] Electrically Tunable Optical Switching of a Mott Insulator-Band Insulator Interface
    Rastogi, A.
    Kushwaha, A. K.
    Shiyani, T.
    Gangawar, A.
    Budhani, R. C.
    ADVANCED MATERIALS, 2010, 22 (40) : 4448 - 4451
  • [30] Effects of finite temperature on the Mott-insulator state
    Pupillo, G
    Williams, CJ
    Prokof'ev, NV
    PHYSICAL REVIEW A, 2006, 73 (01):