Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films

被引：8

作者：

Huang, Lu ^{[1
]}

Jin, Jing ^{[1
]}

Shi, Weimin ^{[1
]}

Yuan, Zhijun ^{[2
]}

Yang, Weiguang ^{[1
]}

Cao, Zechun ^{[1
]}

Wang, Linjun ^{[1
]}

Zhou, Jun ^{[2
]}

Lou, Qihong ^{[2
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Novel Laser Tech & Applicat Syst Lab, Shanghai 201800, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 06期

关键词：

Amorphous silicon; Finite element; Laser crystallization; ALUMINUM-INDUCED CRYSTALLIZATION; TRANSISTORS; SI; GLASS;

D O I：

10.1016/j.mssp.2013.07.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of laser energy density on the crystallization of hydrogenated amorphous silicon (a-Si:H) thin films was studied theoretically and experimentally. The thin films were irritated with a frequency-doubled (lambda=532 nm) Nd:YAG pulsed nanosecond laser. An effective finite element model was built to predict the melting threshold and the optimized laser energy density for crystallization of intrinsic amorphous silicon. Simulation analysis revealed variations in the temperature distribution with time and melting depth. The highest crystalline fraction measured by Raman spectroscopy (84.5%) agrees well with the optimized laser energy density (1000 mJ/cm(2)) in the transient-state simulation. The surface morphology of the thin films observed by optical microscopy is in fairly good agreement with the temperature distribution in the steady-state simulation. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1982 / 1987

页数：6

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