1-imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

被引：86
|
作者：
Wang, Ying [1 ]
Wang, Hongmei [1 ]
Liu, Yunqi [1 ]
Di, Chong-an [1 ]
Sun, Yanming [1 ]
Wu, Weiping [1 ]
Yu, Gui [1 ]
Zhang, Deqing [1 ]
Zhu, Daoben [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Organ Solids, Ctr Mol Sci, Inst Chem, Beijing 100080, Peoples R China
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 40期
关键词：
D O I：
10.1021/ja064580x
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1). Copyright © 2006 American Chemical Society.
引用
收藏
页码：13058 / 13059
页数：2
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