A DC-100 GHz Bandwidth and 20.5 dB Gain Limiting Amplifier in 0.25μm InP DHBT Technology

被引：0

作者：

Daneshgar, Saeid ^{[1
]}

Griffith, Zach ^{[2
]}

Rodwell, Mark J. W. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Teledyne Sci & Imaging, Thousand Oaks, CA 91360 USA

来源：

2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS | 2013年

关键词：

Cherry-Hooper architecture; broadband amplifier; Limiting Amplifier; Indium Phosphide (InP); monolithic microwave integrated circuit (MMIC); optical fiber communications; TRANSIMPEDANCE AMPLIFIER; DYNAMIC-RANGE; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A DC-100 GHz limiting amplifier is designed and fabricated in a 0.25 mu m InP DHBT technology. The amplifier is designed in two stages using a modified Cherry-Hooper architecture proceeding an emitter-follower at each stage. Consuming 145mW of power from a -2.5V supply, it achieves 20.5 dB differential S-21 gain with less than 1 dB gain ripple and better than 20 dB and 15 dB input and output return losses, respectively. The group delay of S-21 is 9 psec with a variation less than +/- 5.5 psec around that. Time domain large signal measurements verifies a single-ended output swing of 260 mV.

引用

页数：4

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