Synergistic effect of p-type and n-type dopants in semiconductors for efficient electrocatalytic water splitting

被引:3
|
作者
Kutlusoy, Tugce [1 ]
Divanis, Spyridon [1 ]
Pittkowski, Rebecca [1 ,2 ]
Marina, Riccardo [3 ]
Frandsen, Adrian M. [1 ]
Minhova-Macounova, Katerina [2 ]
Nebel, Roman [2 ]
Zhao, Dongni [4 ]
Mertens, Stijn F. L. [4 ]
Hoster, Harry [4 ,5 ]
Krtil, Petr [2 ]
Rossmeisl, Jan [1 ]
机构
[1] Univ Copenhagen, Ctr High Entropy Alloy Catalysis, Dept Chem, Univ Pk 5,Kobenhavn O, DK-2100 Copenhagen, Denmark
[2] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, Dolejskova 3, Prague 18223, Czech Republic
[3] Ind Nora SpA, Res & Dev Div, New Applicat Res, I-20134 Milan, Italy
[4] Univ Lancaster, Energy Lancaster & Mat Sci Inst, Dept Chem, Lancaster LA1 4YB, England
[5] Univ Duisburg Essen, Fak Ingenieurwissenschaften, Lehrstuhl Energietechn, Lotharstra 1, D-47048 Duisburg, Germany
基金
新加坡国家研究基金会;
关键词
OXYGEN EVOLUTION REACTION; DENSITY-FUNCTIONAL THEORY; PHOTOCATALYTIC ACTIVITY; BAND-GAP; TIO2; OXIDES; RUTILE; NANOCRYSTALS; PERSPECTIVE; ADSORPTION;
D O I
10.1039/d2sc04585k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The main challenge for acidic water electrolysis is the lack of active and stable oxygen evolution catalysts based on abundant materials, which are globally scalable. Iridium oxide is the only material which is active and stable. However, Ir is extremely rare. While both active materials and stable materials exist, those that are active are usually not stable and vice versa. In this work, we present a new design strategy for activating stable materials originally deemed unsuitable due to a semiconducting nature and wide band gap energy. These stable semiconductors cannot change oxidation state under the relevant reaction conditions. Based on DFT calculations, we find that adding an n-type dopant facilitates oxygen binding on semiconductor surfaces. The binding is, however, strong and prevents further binding or desorption of oxygen. By combining both n-type and p-type dopants, the reactivity can be tuned so that oxygen can be adsorbed and desorbed under reaction conditions. The tuning results from the electrostatic interactions between the dopants as well as between the dopants and the binding site. This concept is experimentally verified on TiO2 by co-substituting with different pairs of n- and p-type dopants. Our findings suggest that the co-substitution approach can be used to activate stable materials, with no intrinsic oxygen evolution activity, to design new catalysts for acid water electrolysis.
引用
收藏
页码:13879 / 13892
页数:14
相关论文
共 50 条
  • [31] CATHODIC POLARIZATION OF N-TYPE AND P-TYPE GERMANIUM
    BATRA, K
    SHARMA, NG
    SINGH, KP
    INDIAN JOURNAL OF TECHNOLOGY, 1985, 23 (11): : 433 - 435
  • [32] N-TYPE CONDUCTION ON P-TYPE GERMANIUM SURFACES
    BROWN, WL
    SHOCKLEY, W
    PHYSICAL REVIEW, 1953, 90 (02): : 336 - 336
  • [33] Efficient all p-type heterojunction photocathodes for photoelectrochemical water splitting
    Lu, Xue
    Liu, Zhifeng
    DALTON TRANSACTIONS, 2017, 46 (22) : 7351 - 7360
  • [34] n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication
    Molnas, Havard
    Russ, Boris
    Farrell, Steven L. L.
    Gordon, Madeleine P. P.
    Urban, Jeffrey J. J.
    Sahu, Ayaskanta
    APPLIED SURFACE SCIENCE, 2022, 590
  • [35] COMPARISON OF THE P-TYPE DOPANTS K AND N IN ZNSE
    STEWART, H
    SIMPSON, J
    WANG, SY
    HAUKSSON, I
    ADAMS, SJA
    PRIOR, KA
    CAVENETT, BC
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 379 - 382
  • [36] Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits
    Yu Pan
    Tao Jian
    Pingfan Gu
    Yiwen Song
    Qi Wang
    Bo Han
    Yuqia Ran
    Zemin Pan
    Yanping Li
    Wanjin Xu
    Peng Gao
    Chendong Zhang
    Jun He
    Xiaolong Xu
    Yu Ye
    Nature Communications, 15 (1)
  • [37] Novel Strategy for Organic Cocrystals of n-Type and p-Type Organic Semiconductors with Advanced Optoelectronic Properties
    Zou, Taoyu
    Chang, Jiawei
    Chen, Quyuan
    Nie, Zhifeng
    Duan, Liangfei
    Guo, Tingting
    Song, Yumin
    Wu, Wei
    Wang, Hai
    ACS OMEGA, 2020, 5 (21): : 12067 - 12072
  • [38] Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
    Deng, Shuo
    Xu, Ran
    Li, Min
    Li, Lijie
    Wang, Zhong Lin
    Zhang, Qing
    NANO ENERGY, 2020, 78
  • [39] WATER-VAPOR-INDUCED N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
    KINGSTON, RH
    PHYSICAL REVIEW, 1955, 98 (06): : 1766 - 1775
  • [40] THE ACTIVATION OF N-TYPE SEMICONDUCTION IN FERROCYANIDES AND P-TYPE SEMICONDUCTION IN FERRICYANIDES BY INTERSTITIAL WATER
    TENNAKONE, K
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (34): : 1193 - 1196