A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

被引：0
|
作者：
Cijvat, E [1 ]
Sjöland, H [1 ]
机构：
[1] Lund Univ, Dept Electrosci, S-21100 Lund, Sweden
来源：
ICECS 2003: PROCEEDINGS OF THE 2003 10TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3 | 2003年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.
引用
收藏
页码：1094 / 1097
页数：4
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