Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

被引：0
|
作者：
Huang, Po-Chin [1 ]
Kang, Ting-Kuo [2 ]
Wang, Bo-Chin [2 ]
Wu, San-Lein [2 ]
Chang, Shoou-Jinn [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Cheng Shiu Univ, Dept Elect Engn, Niaosong Township 833, Kaohsiung Cty, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期
关键词：
SUBSTRATE CURRENT; MOSFETS; ALLOYS; ELECTRON; VOLTAGE; DEVICES; LAYERS; PMOS;
D O I：
10.1143/JJAP.48.04C038
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel. (C) 2009 The Japan Society of Applied Physics
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页数：4
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