Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

被引:32
|
作者
Backus, Sterling [1 ,2 ]
Kirchner, Matt [1 ]
Lemons, Randy [5 ]
Schmidt, David [5 ]
Durfee, Charles [5 ]
Murnane, Margaret [1 ,3 ,4 ]
Kapteyn, Henry [1 ,3 ,4 ]
机构
[1] Kapteyn Murnane Labs Inc, 4775 Walnut St 102, Boulder, CO 80301 USA
[2] Colorado State Univ, ECE, 1373 Campus Delivery, Ft Collins, CO 80523 USA
[3] Univ Colorado, Dept Phys, Boulder, CO 80301 USA
[4] Univ Colorado, JILA, Boulder, CO 80301 USA
[5] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA
来源
OPTICS EXPRESS | 2017年 / 25卷 / 04期
关键词
TI/SAPPHIRE LASER; REPETITION-RATE; HIGH-POWER; FS PULSES; KHZ; TI; GENERATION; FREQUENCY;
D O I
10.1364/OE.25.003666
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-mu J energies with a repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti: sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti: sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as the solutions to these challenges. (C) 2017 Optical Society of America
引用
收藏
页码:3666 / 3674
页数:9
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