Influence of contact angle, growth angle and melt surface tension on detached solidification of InSb

被引:30
|
作者
Wang, YZ [1 ]
Regel, LL [1 ]
Wilcox, WR [1 ]
机构
[1] Clarkson Univ, Int Ctr Grav Mat Sci & Applicat, Potsdam, NY 13699 USA
基金
美国国家航空航天局;
关键词
indium antimonide; microgravity; solidification; detached; de-wetting;
D O I
10.1016/S0022-0248(99)00526-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We extended the previous analysis of detached solidification of InSb based on the moving meniscus model. We found that for steady detached solidification to occur in a sealed ampoule in zero gravity, it is necessary for the growth angle to exceed a critical value, the contact angle for the melt on the ampoule wall to exceed a critical value, and the melt-gas surface tension to be below a critical value. These critical values would depend on the material properties and the growth parameters. For the conditions examined here, the sum of the growth angle and the contact angle must exceed approximately 130 degrees, which is significantly less than required if both ends of the ampoule are open. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 64.75; 81.10.F; 81.30.F: 81.80.
引用
收藏
页码:175 / 180
页数:6
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