Development of an S-band 50-kW-Average-Power Klystron

被引：3
|
作者：
Zhang, Zhaochuan [1 ]
Ding, Yaogen [1 ]
Fan, Junjie [1 ]
Guo, Yanfang [1 ]
Zhang, Yuwen [1 ]
Shen, Bin [1 ]
Fu, Chunjiu [1 ]
Fan, Xudong [1 ]
机构：
[1] Chinese Acad Sci, R&D Ctr High Power Microwave Device, Inst Elect, Beijing 100190, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 05期
关键词：
Crack of alumina disk; design considerations; klystron; simulation results; test results;
D O I：
10.1109/TED.2009.2015417
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the design considerations, simulation results, and test results of an S-band 70-MHz-instantaneous-bandwidth 50-kW-average-power klystron, which was developed by the Institute of Electronics, Chinese Academy of Sciences, from January 2004 to August 2007. The typical result is a 50-kW average output power with an 89-mu s RF pulsewidth and a 300-Hz repetition rate during 8 h of continuous reliability testing. A cracked output window is also discussed.
引用
收藏
页码：891 / 895
页数：5
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