Design and Analysis of a 6 Watt GaN based X-Band Power Amplifier

被引：0

作者：

Yeshaswy, R. ^{[1
]}

Pratheik, A. ^{[1
]}

Karteek, R. V. Sai ^{[1
]}

Devi, Sanjika R. ^{[1
]}

Kurup, Dhanesh G. ^{[1
]}

机构：

[1] Amrita Vishwa Vidyapeetham Univ, Amrita Sch Engn, Dept Elect & Commun Engn, Bangalore, Karnataka, India

来源：

2016 INTERNATIONAL CONFERENCE ON COMMUNICATION AND SIGNAL PROCESSING (ICCSP), VOL. 1 | 2016年

关键词：

GaN HEMT; High Power Amplifier (HPA); Power Added Efficiency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper, deals with the design of a class AB, Gallium Nitride (GaN) transistor based High Power Amplifier (HPA) for Monolithic Microwave Integrated Circuits (MMICs). GaN transistor is selected because of its rugged nature and its capability to work in extreme conditions. The designed HPA is intended to be housed in a Quad Trans-Receive Module (QTRM) of an Active Phased Array RADAR system. The HPA delivers a gain of 10.2 dB and an output power of 37 dBm, as well as high efficiency over many octaves of bandwidth.

引用

页码：69 / 72

页数：4

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