Submicron, high speed complementary metal-oxide semiconductor compatible metal-semiconductor-metal photodetector

被引：1
|
作者：
DeVries, AM
Tarr, NG
Cheben, P
Grant, PD
Janz, S
Xu, DX
机构：
[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1S 5B6, Canada
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2002年 / 20卷 / 03期
关键词：
D O I：
10.1116/1.1475981
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Metal-semiconductor-metal photodetectors with electrode spacing of 0.5 mum have been fabricated on polysilicon films formed by low-pressure chemical vapor deposition. The detectors give a responsivity of 8 mA/W at 980 nm, and a 3-dB bandwidth of 1.5 GHz. Steady-state and transient photoresponse both appear to be limited by recombination and trapping at energy levels within the forbidden gap. (C) 2002 American Vacuum Society.
引用
收藏
页码：1079 / 1081
页数：3
相关论文
共 50 条
  • [31] Comprehensive Study of Pd/GaN Metal-Semiconductor-Metal Sensors with Metal-Oxide Mixture
    Huang, T. H.
    Chen, S. Fu
    Chang, H. J.
    Huang, K. M.
    Lee, Y. L.
    Chu, Y. H.
    Wu, C. H.
    Lour, W. S.
    Wu, M. C.
    ELECTROCHEMICAL NANO/BIO SENSORS 2, 2010, 28 (34): : 13 - 19
  • [32] Impulse response of the Metal-Semiconductor-Metal photodetector with a heterobarrier
    Averine, SV
    Chan, YC
    Lam, YL
    Bondarenko, O
    Sachot, R
    OPTICAL ENGINEERING FOR SENSING AND NANOTECHNOLOGY (ICOSN 2001), 2001, 4416 : 316 - 319
  • [33] High-Speed Metal-Semiconductor-Metal Photo diode
    Ganguly, Amar K.
    Ganguly, Anuva
    Bhoumic, Manik
    Ganguly, Aparna
    IEEE REGION 10 COLLOQUIUM AND THIRD INTERNATIONAL CONFERENCE ON INDUSTRIAL AND INFORMATION SYSTEMS, VOLS 1 AND 2, 2008, : 281 - +
  • [34] High-speed, efficient metal-semiconductor-metal photodetectors
    St. Collin
    Pardo, F.
    Averin, S. V.
    Bardou, N.
    Pelouard, J-L
    QUANTUM ELECTRONICS, 2010, 40 (05) : 421 - 424
  • [35] Silicon metal-semiconductor-metal photodetector with zinc oxide transparent conducting electrodes
    Budianu, E.
    Purica, M.
    Iacomi, F.
    Baban, C.
    Prepelita, P.
    Manea, E.
    THIN SOLID FILMS, 2008, 516 (07) : 1629 - 1633
  • [36] OPTIMIZATION OF HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
    BURM, J
    LITVIN, KI
    SCHAFF, WJ
    EASTMAN, LF
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) : 722 - 724
  • [37] HIGH-SPEED 1.3 MU-M INGAAS/GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR
    JAGANNATH, C
    CHOUDHURY, ANMM
    NEGRI, A
    ELMAN, B
    HAUGSJAA, P
    APPLIED PHYSICS LETTERS, 1991, 58 (04) : 325 - 327
  • [38] Characterization of microwave photoswitch integrating Metal-Semiconductor-Metal photodetector
    Zebentout, Abdel-Djawad
    Benzina, Amina
    Bensaad, Zouaoui
    Abid, Hamza
    OPTIK, 2020, 220
  • [39] GaN metal-semiconductor-metal UV photodetector with recessed electrodes
    Jiang, H., 1600, Japan Society of Applied Physics (41):
  • [40] Comparative study of Plasmonics based Metal-Semiconductor-Metal Photodetector
    Kashyap, Savita
    Kaur, Harsimranjit
    2019 6TH INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING AND INTEGRATED NETWORKS (SPIN), 2019, : 303 - 308
12345