Submicron, high speed complementary metal-oxide semiconductor compatible metal-semiconductor-metal photodetector

被引：1
|
作者：
DeVries, AM
Tarr, NG
Cheben, P
Grant, PD
Janz, S
Xu, DX
机构：
[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1S 5B6, Canada
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2002年 / 20卷 / 03期
关键词：
D O I：
10.1116/1.1475981
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Metal-semiconductor-metal photodetectors with electrode spacing of 0.5 mum have been fabricated on polysilicon films formed by low-pressure chemical vapor deposition. The detectors give a responsivity of 8 mA/W at 980 nm, and a 3-dB bandwidth of 1.5 GHz. Steady-state and transient photoresponse both appear to be limited by recombination and trapping at energy levels within the forbidden gap. (C) 2002 American Vacuum Society.
引用
收藏
页码：1079 / 1081
页数：3
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