Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy:: In situ observations and detailed modeling of the growth (vol 79, pg 746, 2001)

被引：0
|
作者：
Murata, T [1 ]
Nakazawa, H
Tsukidate, Y
Suemitsu, M
机构：
[1] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Ctr Nanotubes & Nanostructured Composites, Suwon 440746, South Korea
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期
关键词：
D O I：
10.1063/1.1490405
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：184 / 184
页数：1
相关论文
共 50 条
  • [21] INSTABILITY IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF SI/SI(111)
    YANG, HN
    WANG, GC
    LU, TM
    PHYSICAL REVIEW LETTERS, 1994, 73 (17) : 2348 - 2351
  • [22] GROWTH OF SI1-XGEX HETEROSTRUCTURES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
    OHTANI, N
    MOKLER, SM
    XIE, MH
    ZHANG, J
    ZHANG, X
    JOYCE, BA
    INTERNATIONAL JOURNAL OF OPTOELECTRONICS, 1994, 9 (02): : 193 - 203
  • [23] Phosphorus incorporation during Si(001): P gas-source molecular beam epitaxy:: Effects on growth kinetics and surface morphology
    Cho, B.
    Bareno, J.
    Foo, Y. L.
    Hong, S.
    Spila, T.
    Petrov, I.
    Greene, J. E.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)
  • [24] Gas-source molecular beam epitaxy of SiGe virtual substrates:: I.: Growth kinetics and doping
    Hartmann, JM
    Gallas, B
    Ferguson, R
    Fernàndez, J
    Zhang, J
    Harris, JJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (04) : 362 - 369
  • [25] In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy
    Zhang, J
    Lees, AK
    Taylor, AG
    Raisbeck, D
    Shukla, N
    Fernandez, JM
    Joyce, BA
    Pemble, ME
    JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 40 - 46
  • [26] DETERMINATION OF EXCESS PHOSPHORUS IN LOW-TEMPERATURE GAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    HE, Y
    ELMASRY, NA
    RAMDANI, J
    BEDAIR, SM
    MCCORMICK, TL
    NEMANICH, RJ
    WEBER, ER
    APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1671 - 1673
  • [27] ELECTRICAL-PROPERTIES OF INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
    LIANG, BW
    LEE, PZ
    SHIH, DW
    TU, CW
    APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2104 - 2106
  • [28] Observation of hydrogen-coverage- and temperature-dependent adsorption kinetics of disilane on Si(100) during Si gas-source molecular beam epitaxy
    Tohoku Univ, Sendai, Japan
    Jpn J Appl Phys Part 2 Letter, 5B (L625-L628):
  • [29] Observation of hydrogen-coverage- and temperature-dependent adsorption kinetics of disilane on Si(100) during Si gas-source molecular beam epitaxy
    Suemitsu, M
    Nakazawa, H
    Morita, T
    Miyamoto, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (5B): : L625 - L628
  • [30] GROWTH AND CHARACTERIZATION OF SI/SIGE MICROSTRUCTURES ON PATTERNED SI SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
    ZHANG, J
    ZHANG, XM
    MATSUMURA, A
    MARINOPOULOU, A
    HARTUNG, J
    ANWAR, N
    PARRY, G
    XIE, MH
    MOKLER, SM
    FERNANDEZ, JM
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 950 - 954
12345