Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy:: In situ observations and detailed modeling of the growth (vol 79, pg 746, 2001)

被引：0
|
作者：
Murata, T [1 ]
Nakazawa, H
Tsukidate, Y
Suemitsu, M
机构：
[1] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Ctr Nanotubes & Nanostructured Composites, Suwon 440746, South Korea
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期
关键词：
D O I：
10.1063/1.1490405
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：184 / 184
页数：1
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