Array of InGaAsSb light-emitting diodes (λ=3.7 μm)

被引：1
|
作者：
Zakheim, A. L. [1 ]
Zotova, N. V.
Il'inskaya, N. D.
Karandashev, S. A.
Matveev, B. A.
Remennyi, M. A.
Stus', N. M.
Usikova, A. A.
Chernyakov, A. E. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, Sci Technol Ctr Microelect & Submicrometer Hetero, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2009年 / 43卷 / 04期
关键词：
INDIUM ARSENIDE; EMISSION; LEDS;
D O I：
10.1134/S1063782609040198
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Spectral, current-voltage, and light-current characteristics of p-InAsSbP/n-InGaAsSb/n (+)-InAs narrow-gap diode structures with 130 x 130 mu m lateral dimensions of active elements are presented. The 2D distribution of light emitted by the samples fabricated in the form of emitting flip-chip 1 x 4 arrays is examined, including analysis of the emission uniformity. The limiting effective temperature created by an emitter of this type is determined.
引用
收藏
页码：508 / 513
页数：6
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